HYM71V16M635AT6-H - HYNIX HYM71V16M635AT6-H Memory Module - 128MB PC133 SDRAM SODIMM Simple...
- Part Number:
- HYM71V16M635AT6-H
- Model Number:
- HYM71V16M635AT6-H
- Make:
- HYNIX
- Lead Time:
- Available
- Qty In Stock:
- Available
HYNIX HYM71V16M635AT6-H Memory Module - 128MB PC133 SDRAM SODIMM Simple Type: Memory Module
The Hynix HYM71V16M635AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB. The Hynix HYM71V16M635AT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes memory. The Hynix HYM71V16M635AT6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
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Features
- - 1, 2, 4 or 8 for Interleave Burst
- - 1, 2, 4 or 8 or Full page for Sequential Burst
- 1.25” (31.75mm) Height PCB with double sided components
- 144pin SDRAM SO DIMM
- 4096 refresh cycles / 64ms
- All device pins are compatible with LVTTL interface
- Auto refresh and self refresh
- Data mask function by DQM
- Module bank : two physical bank
- PC133/PC100MHz support
- Programmable Burst Length and Burst Type
- Programmable CAS Latency ; 2, 3 Clocks
- SDRAM internal banks : four banks
- Serial Presence Detect with EEPROM
- Single 3.3±0.3V power supply
Specifications
- Clock Frequency: 133MHz
- Internal Banks: 4 Banks
- Plating: Gold
- Power: Normal
- SDRAM Package: TSOP-II
Applications
- None Available
Aliases
- None Available
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